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Future Power Device Materials

  • Institute of Materials and Systems for Sustainability

Kenji Shiraishi [Professor]

Outline of Seeds

We study SiC and GaN which is expected as promising future power device materials. For instance, we have found that generation of interface defects whose energy levels are located near the conduction band bottom, is inevitable. This is due to the very foundamental properties of SiC that wave function of SiC conduction band bottom is nearly free electron like (NFE) states. Moreover, we have modeled the deterioration of theshold voltage instability of SiC-MOSFET.

Novelty and originality of this research

This research is not based on the empirical knowledges but on the foundmental properties obtained by quantum mechanics. We research SiC and GaN by using quantum mechanical knowledge

Application and research area for Industry collaboration

Based on the knowledge of demerit of new power device materials (SiC and GaN), we are trying to overcome these demerit to realize future power devices.

Key Takeaway

Research group from foundamental principles to real device productions.

Keywords

Power devices, Materials, SiC, GaN

Technologies

  • First Principles Calculations

Equipment

  • Workstation

Monographs, Papers and Articles

  • Appl. Phys. Lett. 100, 212110 (2012)
  • Jpn. J. Appl. Phys. 51, 02BJ11 (2012)