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Crystal growth and characterization of energy materials

  • Institute of Materials and Systems for Sustainability

Toru Ujihara [Professor]

http://www.numse.nagoya-u.ac.jp/ujihara/

Outline of Seeds

(1) High quality crystal growth of SiC for next-generation power device
Silicon carbide is expected to be a next-generation power device material. We study for the high quality SiC crystal growth by solution method.
(2) AlN whisker for thermal management materials
We study the synthesis method of AlN whisker for the filler materials for composite polymer with high electric insulation and thermal conductivity.
(3) Development of direct measurement method of conduction band structure
We develop the visible light photoemission spectroscopy (VPS) method as the direct measurement method of conduction band structure and energy distribution of conduction electron in electric materials.

Novelty and originality of this research

(1) High quality crystal growth of SiC for next-generation power device
We revealed the mechanism of high-quality SiC growth by the solution method and demonstrated the reduction of the number of the defect in crystal.
(2) AlN whisker for thermal management materials
We proposed the simple synthesis method of AlN whisker by the reaction of atmospheric nitrogen gas and aluminum vapor.
(3) Development of direct measurement method of conduction band structure
The conduction band structure, which is difficult to precisely evaluate by conventional method, is evaluated by our VPS method.

Application and research area for Industry collaboration

1) High quality crystal growth of SiC for next-generation power device
Fabrication of SiC wafer by solution method
Characterization of power device properties.
(2) AlN whisker for thermal management materials
Quantity synthesis
Fabrication of polymer composite
(3) Development of direct measurement method of conduction band structure
Development of VPS measurement system
Evaluation of various electrical materials

Key Takeaway

We have studied the process and evaluation method of energy materials for the realization of energy saving.

Keywords

Crystal growth, Power device, SiC, Thermal management, Filler, Conduction electron

Technologies

  • High-quality SiC solution growth, Evaluation of defects in crystal (X-ray topography, Transmission electron microscopy), Solution simulation, Synthesis of AlN whiskers, Visible light photoemission spectroscopy

Equipment

  • SiC solution growth furnace, Optical microscope, Confocal laser microscope, Atomic force microscope, AlN whisker furnace, Visible light photoemission spectroscopy system